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  smd type transistors sot-223 unit: mm 3.00 +0.1 -0.1 0.70 +0.1 -0.1 2.9 4.6 6.50 +0.2 -0.2 3.50 +0.2 -0.2 0.90 +0.2 -0.2 7.00 +0.3 -0.3 1.65 +0.15 -0.15 0 .1max 0.90 +0.05 -0.05 12 4 3 1 base 2 collector 3 emitter bcp69 features high current. three current gain selections. 1.4 w total power dissipation. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -32 v collector-emitter voltage v ceo -20 v emitter-base voltage v ebo -5 v collector current (dc) i c -1 a peak collector current i cm -2 a peak base current i bm -200 ma total power dissipation * 1 0.625 w *2 1 w *3 1.4 w storage temperature t stg -65to+150 junction temperature t j150 operating ambient temperature t amb -65to+150 thermal resistance from junction to ambient * *1 200 k/w *2 125 k/w *3 89 k/w thermal resistance from junction to solder point r th(j-s) 15 k/w *1 device mounted on a fr4 pcb; single-sided copper; tinplated; standard footprint - for sot223. *2 device mounted on a fr4 pcb; single-sided copper; tinplated; 1 cm 2 collector mounting pad. *3 device mounted on a fr4 pcb; single-sided copper; tinplated; 6 cm 2 collector mounting pad. p tot r th(j-a) smd type transistors smd type transistors smd type smd type smd type ic smd type smd type ic smd type smd type ic smd type smd type product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
smd type transistors h fe classification type bcp69 BCP69-16 BCP69-16/in bcp69-25 marking bcp69 bcp69/16 69-16n bcp69/25 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit i e =0a;v cb = -25 v -100 na i e =0a;v cb =-25v;tj=150 -10 a emitter cutoff current i ebo i c =0a;v eb = -5 v -100 na dc current gain bcp69 v ce =-10v;i c =-5ma 50 v ce =-1v;i c = -500 ma 85 375 v ce =-1v;i c =-1a 60 BCP69-16 100 250 BCP69-16/in 140 230 bcp69-25 160 375 collector-emitter saturation voltage i c =-1a;i b = -100 ma; -500 mv v ce =-10v;i c = -5 ma -700 mv v ce =-1v;i c =-1a -1 v collector capacitance c c i e =ie=0a;v cb = -10 v; f = 1 mhz 28 pf transition frequency f t i c =-50ma;v ce = -5 v; f = 100 mhz 40 140 mhz base-emitter voltage v be collector cutoff current i cbo v cesat h fe v ce =-1v;i c = -500 ma smd type transistors bcp69 smd type transistors smd type transistors smd type smd type smd type ic smd type smd type ic smd type smd type ic smd type smd type product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123


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